<^.mi-dondiictoi , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 un i t ; nun 2sc2098 maximum ratings characteristic ?jiilli.'ctor-ilas? volui^e lolk't-tnr- ijniiltdr \'ult;vi-c (kkii ?' (kl) ilniilti'r-lli.-io v(.il(;ir<- c'ollfl-tur current 'i'ol.il novice dishipulion ctc-so'c) o|h.t3tilu; jlllu-tioll temiicrnturc h^n^c sl.ir:i|k timiipuraturi' !i.ini;c symi10l vcno vceh vrno ic iv tj t?tb rating 70 70 1 0 20 1 50 -55-150 un i t v v v a w "c 'c 1. hack 2. collkctoiuiieat sink) 3. kmittkk jedkc to-220ab klkcthicai, ciiaractfiustics (t,-7.s"c) characteristic (.?r.lli-clnr clil, ,11 (.-iirrnn c.'nllrrtnr-kiiilllit pro.lkilnwil voh.ik" *""<""""?"" ih !,,??? hc7 oirrrnl g.li.l (note 1 ) vnlli,rr (note 1) i'rc'lm-l kymnot, icno . (hrlcnn vckk.r ^ ( nil) r. n o hrc vre(..t) 't c 01) condition vcn-hov i,;-0 i c ^ 1 m a i ^ ? 0 ic-lqma r^n~l^o i e ~ 1ma ig~^ vcp-sv ic-4a i c - 1 a t n - 0 .| a vc(;-r.v [c-n.r,a vcb-iov ik-o f - imllt min. ? 70 4 20 - 100 typ. ? - ? - - - 8 0 max. 0.1 ? _ 1 00 1.5 - 1^0 unit m a v v v ? v mhz ,, note i : iiiim> t-"t : ]iii? duly cyrlc r- ?, nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice, information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
npn epitaxial planar type test circuit 68pf 12d.1t.5p ii?nnr^ tompf to 50pf c,. 100pf.2200of,22?if in parallel c,: 100pf.z200pf. 10>lf in parallel notes all coil are made from 1.5mm0 silver plated copper wire coil dimensions in milli-maw d inner diameter of coil t: turn number ol coil p : puch of coil 80,5t, ip zout-50q \-^w^ o+vcc to 50pf typical performance data collector dissipation vs. ambient temperature collector dissipation pc (w) o o o o - d iv> '?. 0> oft c \ \' 40 80 120 160 200 ambient temperature t, i'd collector current vs. collector to emitter voltage loor 0 4 8 1z 16 !0 collector to emitter voltage vce (v) collector to emitter breakdown voltage vs. base to emitter resistance 60 50 - ^ *ft in * 1 h 2 i 30 x 00 u > ta?25'c ^o sb'wmfl soo ik zk 5k iok base to eminer resistance rse (0) 120 100 u i ? h z uj 5 60 20, dc current gain vs. collector current ta-js'c vce =? 10v 0 100 200 300 400 collector current lc (mai
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